1/4 STPS60L45CW january 2002 - ed: 2c low drop power schottky rectifier ? dual center tap schottky barrier rectifier suited for 5v output in off line ac/dc power supplies. packaged in to-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications. description n very small conduction losses n negligible switching losses n extremely fast switching n low forward voltage drop n low thermal resistance features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 45 v i f(rms) rms forward current 50 a i f(av) average forward current tc = 135c d = 0.5 per diode per device 30 60 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 600 a i rrm repetitive peak reverse current tp = 2 m s square f=1khz 2a i rsm non repetitive peak reverse current tp = 100 m s square 4a tstg storage temperature range - 65 to + 150 c tj maximum operating junction temperature (*) 150 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) a1 k a2 i f(av) 2x30a tj (max) 150c v rrm 45 v v f (max) 0.50 v major products characteristics to-247 a1 k a2 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS60L45CW 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage cur- rent tj = 25c v r =45v 1.5 ma tj = 125c 175 350 v f * forward voltage drop tj = 25 ci f =30a 0.55 v tj = 125c i f =30a 0.44 0.5 tj=25 ci f =60a 0.73 tj = 125c i f =60a 0.64 0.72 static electrical characteristics (per diode) pulse test : * tp = 380 m s, d <2% to evaluate the conduction losses use the following equation : p=0.28xi f(av) + 0.0073 i f 2 (rms) 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 22 pf(av)(w) if(av) (a) t d =tp/t tp d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 if(av)(a) tamb(c) t d =tp/t tp rth(j-a)=15c/w rth(j-a)=rth(j-c) fig. 2: average current versus ambient temperature ( d =0.5, per diode). symbol parameter value unit r th (j-c) junction to case per diode total 0.75 0.42 c/w r th (c) coupling 0.1 c/w thermal resistances when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c)
STPS60L45CW 3/4 0 5 10 15 20 25 30 35 40 45 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 vr(v) ir(ma) tj=100c tj=125c tj=25c tj=150c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 12 51020 50 0.1 1.0 10.0 vr(v) c(nf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 200 vfm(v) ifm(a) typical values tj=150c maximum values tj=125c maximum values tj=100c maximum values tj=25c fig. 7: forward voltage drop versus forward current (per diode). 1e-3 1e-2 1e-1 1e+0 0 50 100 150 200 250 300 350 400 t(s) im(a) tc=125c tc=75c tc=25c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per 1e-4 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp single pulse d = 0.5 d = 0.2 d = 0.1 fig. 4: relative variation of thermal transient impedance junction to case versus pulse duration.
STPS60L45CW 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 type marking package weight base qty delivery mode STPS60L45CW STPS60L45CW to-247 4.36 g 30 tube n cooling method : c n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n n epoxy meets ul94,v0
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